unisonic technologies co., ltd mmbt2222a npn silicon transistor www.unisonic.com.tw 1 of 6 copyright ? 2011 unisonic technologies co., ltd qw-r206-019,i npn general purpose amplifier ? features * this device is for use as a medium power amplifier and switch requiring collector currents up to 600ma. sot-23 1 2 3 sot-523 1 2 3 sot-323 1 2 3 ? ordering information ordering number pin assignment lead free halogen free package 12 3 packing mmbt2222al-ae3-r mmbt2222ag-ae3-r sot-23 e b c tape reel mmbt2222al-al3-r MMBT2222AG-AL3-R sot-323 e b c tape reel mmbt2222al-an3-r mmbt2222ag-an3-r sot-523 e b c tape reel ? marking
mmbt2222a npn silicon transistor unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r206-019,i ? absolute maximum ratings (ta=25c, unless otherwise specified.) parameter symbol ratings unit collector-base voltage v cbo 75 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6 v collector current i c 600 ma sot-23 350 sot-323 200 collector dissipation sot-523 p c 150 mw junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol ratings unit sot-23 357 sot-323 625 junction to ambient sot-523 ja 833 c/w
mmbt2222a npn silicon transistor unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r206-019,i ? electrical characteristics (ta=25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics collector-base breakdown voltage bv cbo i c =10 a, i e =0 75 v collector-emitter breakdown voltage bv ceo i c =10ma, i b =0 40 v emitter-base breakdown voltage bv ebo i e =10 a, i c =0 6 v v cb =60v, i e =0 0.01 a collector cutoff current i cbo v cb =60v, i e =0, ta=150 c 10 a emitter cutoff current i ebo v eb =3.0v, i c =0 10 na base cutoff current i bl v ce =60v, v eb(off) =3.0v 20 na collector cutoff current i ceo v ce =60v, v eb(off) =3.0v 10 na on characteristics i c =0.1ma, v ce =10v 35 i c =1.0ma, v ce =10v 50 i c =10ma, v ce =10v 75 i c =10ma, v ce =10v, ta= -55 c 35 i c =150ma, v ce =10v(note) 100 300 i c =150ma, v ce =1.0v(note) 50 dc current gain h fe i c =500ma, v ce =10v(note) 40 i c =150ma, i b =15ma 0.3 v collector-emitte r saturation voltage(note) v ce(sat) i c =500ma, i b =50ma 1.0 v i c =150ma, i b =15ma 0.6 1.2 v base-emitter saturation voltage(note) v be(sat) i c =500ma, i b =50ma 2.0 v small signal characteristics real part of common-emitter high frequency input impedance re(hje) i c =20ma, v cb =20v, f=300mhz 60 ? transition frequency f t i c =20ma, v ce =20v, f=100mhz 300 mhz output capacitance cobo v cb =10v, i e =0, f=100khz 8.0 pf input capacitance cibo v eb =0.5v, i c =0, f=100khz 25 pf collector base time constant rb'cc i c =20ma, v cb =20v, f=31.8mhz 150 ps noise figure nf i c =100 a, v ce =10v, rs=1.0k ? f=1.0khz 4.0 db switching characteristics delay time t d v cc =30v, v be(off) =0.5v, 10 ns rise time t r i c =150ma, i b1 =15ma 25 ns storage time t s vcc=30v, i c =150ma 225 ns fall time t f i b1 = i b2 =15ma 60 ns note: pulse test: pulse width 300 s, duty cycle 2.0%
mmbt2222a npn silicon transistor unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r206-019,i ? test circuits 500 ? 1.0k ? 200 ? 30v 16v 200ns 0 saturated turn-on switching time saturated turn-off switching time
mmbt2222a npn silicon transistor unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r206-019,i ? typical characteristics collector current, i c (ma) 0.1 0.3 1 10 30 100 300 0 100 200 300 400 500 125 c 25 c -40 c v ce =5v dc current gain vs. collector current dc current gain , h fe collector current, i c (ma) 1 10 100 500 0.1 -40 c =10 collector-emitter saturation voltage vs. collector current 125 c 25 c 0.2 0.3 0.4 collector-emitter voltage, v ce(sat) (v) base-emitter voltage, v be(sat) (v) base-emitter on voltage, v be(on) (v) collector current, i cbo (na) capacitance (pf)
mmbt2222a npn silicon transistor unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r206-019,i ? typical characteristics(cont.) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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